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Materials | Free Full-Text | Dependence of InGaN Quantum Well Thickness on the Nature of Optical Transitions in LEDs
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Realization of p-type gallium nitride by magnesium ion implantation for vertical power devices | Scientific Reports
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The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs | Scientific Reports
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The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs | Scientific Reports
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Influence of Annealing Conditions on Dopant Activation of Si+ and Mg+ Implanted GaN | Scientific.Net
Ion implantation of tunnel junction as a method for defining the aperture of III-nitride-based micro-light-emitting diodes
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Dopant activation process in Mg-implanted GaN studied by monoenergetic positron beam | Scientific Reports
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Comparative Analysis of Defects in Mg-Implanted and Mg-Doped GaN Layers on Freestanding GaN Substrates | SpringerLink
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Improved Mg Dopant Activation in p‐GaN and Enhanced Electroluminescence in InGaN/GaN LEDs by Plasma Immersion Ion Implantation of Phosphorus - Upadhyay - 2018 - physica status solidi (a) - Wiley Online Library
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Enhanced performance of vertical-structured InGaN micro-pixelated light-emitting-diode array fabricated using an ion implantation process
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Schematic illustrations of (a)Al and SiO 2 were served as shadow mask... | Download Scientific Diagram
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NEXAFS spectra of Mg- and Si-implanted GaN samples. The spectra are... | Download Scientific Diagram
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Improved Mg Dopant Activation in p‐GaN and Enhanced Electroluminescence in InGaN/GaN LEDs by Plasma Immersion Ion Implantation of Phosphorus - Upadhyay - 2018 - physica status solidi (a) - Wiley Online Library
Improved Output Power of InGaN LEDs by Lateral Overgrowth on Si-Implanted n-GaN Surface to Form Air Gaps
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Dopant activation process in Mg-implanted GaN studied by monoenergetic positron beam | Scientific Reports
Realization of Ultrahigh Quality InGaN Platelets to be Used as Relaxed Templates for Red Micro-LEDs | ACS Applied Materials & Interfaces
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Comparison of Implant Isolation Species for GaN Field-effect Transistor Structures | Materials Research Society Internet Journal of Nitride Semiconductor Research | Cambridge Core
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