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Jel zúgolódás fordítás mg implantation ingan Bemutató Kihívás Csipesz pillangó

Materials | Free Full-Text | Dependence of InGaN Quantum Well Thickness on  the Nature of Optical Transitions in LEDs
Materials | Free Full-Text | Dependence of InGaN Quantum Well Thickness on the Nature of Optical Transitions in LEDs

Realization of p-type gallium nitride by magnesium ion implantation for  vertical power devices | Scientific Reports
Realization of p-type gallium nitride by magnesium ion implantation for vertical power devices | Scientific Reports

Si and Mg Ion Implantation for Doping of GaN Grown on Silicon | Semantic  Scholar
Si and Mg Ion Implantation for Doping of GaN Grown on Silicon | Semantic Scholar

The impact of point defects in n-type GaN layers on thermal decomposition  of InGaN/GaN QWs | Scientific Reports
The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs | Scientific Reports

PDF) TOF-SIMS analysis of InGaN/GaN for expected doping profiles
PDF) TOF-SIMS analysis of InGaN/GaN for expected doping profiles

The impact of point defects in n-type GaN layers on thermal decomposition  of InGaN/GaN QWs | Scientific Reports
The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs | Scientific Reports

Si and Mg Ion Implantation for Doping of GaN Grown on Silicon | Semantic  Scholar
Si and Mg Ion Implantation for Doping of GaN Grown on Silicon | Semantic Scholar

Doping and isolation of GaN, InGaN and InAlN using ion implantation - UNT  Digital Library
Doping and isolation of GaN, InGaN and InAlN using ion implantation - UNT Digital Library

PDF) Ion implantation and annealing studies in III-V nitrides | Robert  Karlicek, Jr. - Academia.edu
PDF) Ion implantation and annealing studies in III-V nitrides | Robert Karlicek, Jr. - Academia.edu

Influence of Annealing Conditions on Dopant Activation of Si+ and Mg+  Implanted GaN | Scientific.Net
Influence of Annealing Conditions on Dopant Activation of Si+ and Mg+ Implanted GaN | Scientific.Net

Ion implantation of tunnel junction as a method for defining the aperture  of III-nitride-based micro-light-emitting diodes
Ion implantation of tunnel junction as a method for defining the aperture of III-nitride-based micro-light-emitting diodes

Dopant activation process in Mg-implanted GaN studied by monoenergetic  positron beam | Scientific Reports
Dopant activation process in Mg-implanted GaN studied by monoenergetic positron beam | Scientific Reports

Comparative Analysis of Defects in Mg-Implanted and Mg-Doped GaN Layers on  Freestanding GaN Substrates | SpringerLink
Comparative Analysis of Defects in Mg-Implanted and Mg-Doped GaN Layers on Freestanding GaN Substrates | SpringerLink

PDF) X-ray Diffraction Study of InGaN/GaN Superlattice Implanted with Eu3+  Ions | Andre Anders - Academia.edu
PDF) X-ray Diffraction Study of InGaN/GaN Superlattice Implanted with Eu3+ Ions | Andre Anders - Academia.edu

Improved Mg Dopant Activation in p‐GaN and Enhanced Electroluminescence in  InGaN/GaN LEDs by Plasma Immersion Ion Implantation of Phosphorus -  Upadhyay - 2018 - physica status solidi (a) - Wiley Online Library
Improved Mg Dopant Activation in p‐GaN and Enhanced Electroluminescence in InGaN/GaN LEDs by Plasma Immersion Ion Implantation of Phosphorus - Upadhyay - 2018 - physica status solidi (a) - Wiley Online Library

Improved Mg Dopant Activation in p‐GaN and Enhanced Electroluminescence in  InGaN/GaN LEDs by Plasma Immersion Ion Implantation of Phosphorus -  Upadhyay - 2018 - physica status solidi (a) - Wiley Online Library
Improved Mg Dopant Activation in p‐GaN and Enhanced Electroluminescence in InGaN/GaN LEDs by Plasma Immersion Ion Implantation of Phosphorus - Upadhyay - 2018 - physica status solidi (a) - Wiley Online Library

Doping and isolation of GaN, InGaN and InAlN using ion implantation - UNT  Digital Library
Doping and isolation of GaN, InGaN and InAlN using ion implantation - UNT Digital Library

Enhanced performance of vertical-structured InGaN micro-pixelated  light-emitting-diode array fabricated using an ion implantation process
Enhanced performance of vertical-structured InGaN micro-pixelated light-emitting-diode array fabricated using an ion implantation process

Schematic illustrations of (a)Al and SiO 2 were served as shadow mask... |  Download Scientific Diagram
Schematic illustrations of (a)Al and SiO 2 were served as shadow mask... | Download Scientific Diagram

NEXAFS spectra of Mg- and Si-implanted GaN samples. The spectra are... |  Download Scientific Diagram
NEXAFS spectra of Mg- and Si-implanted GaN samples. The spectra are... | Download Scientific Diagram

Improved Mg Dopant Activation in p‐GaN and Enhanced Electroluminescence in  InGaN/GaN LEDs by Plasma Immersion Ion Implantation of Phosphorus -  Upadhyay - 2018 - physica status solidi (a) - Wiley Online Library
Improved Mg Dopant Activation in p‐GaN and Enhanced Electroluminescence in InGaN/GaN LEDs by Plasma Immersion Ion Implantation of Phosphorus - Upadhyay - 2018 - physica status solidi (a) - Wiley Online Library

Improved Output Power of InGaN LEDs by Lateral Overgrowth on Si-Implanted  n-GaN Surface to Form Air Gaps
Improved Output Power of InGaN LEDs by Lateral Overgrowth on Si-Implanted n-GaN Surface to Form Air Gaps

Dopant activation process in Mg-implanted GaN studied by monoenergetic  positron beam | Scientific Reports
Dopant activation process in Mg-implanted GaN studied by monoenergetic positron beam | Scientific Reports

Realization of Ultrahigh Quality InGaN Platelets to be Used as Relaxed  Templates for Red Micro-LEDs | ACS Applied Materials & Interfaces
Realization of Ultrahigh Quality InGaN Platelets to be Used as Relaxed Templates for Red Micro-LEDs | ACS Applied Materials & Interfaces

Comparison of Implant Isolation Species for GaN Field-effect Transistor  Structures | Materials Research Society Internet Journal of Nitride  Semiconductor Research | Cambridge Core
Comparison of Implant Isolation Species for GaN Field-effect Transistor Structures | Materials Research Society Internet Journal of Nitride Semiconductor Research | Cambridge Core

Realization of p-type gallium nitride by magnesium ion implantation for  vertical power devices | Scientific Reports
Realization of p-type gallium nitride by magnesium ion implantation for vertical power devices | Scientific Reports