Micro | Free Full-Text | Ion Implantation Doping in Silicon Carbide and Gallium Nitride Electronic Devices
Process Optimization for Selective Area Doping of GaN by Ion Implantation | SpringerLink
Process Optimization for Selective Area Doping of GaN by Ion Implantation | SpringerLink
1: Process flow for ion implanted CAVETs with no regrowth. (a)... | Download Scientific Diagram
Silicon implantation for gallium nitride light-emitting diodes
Micro | Free Full-Text | Ion Implantation Doping in Silicon Carbide and Gallium Nitride Electronic Devices
Si and Mg Ion Implantation for Doping of GaN Grown on Silicon | Semantic Scholar
Implantation damage formation in a-, c- and m-plane GaN - ScienceDirect
Status of ion implantation doping and isolation of III-V nitrides - UNT Digital Library
Process engineering of GaN power devices via selective-area p-type doping with ion implantation and ultra-high-pressure annealing: Journal of Applied Physics: Vol 132, No 13
PDF) Selective p-type Doping of GaN:Si by Mg Ion Implantation and Multicycle Rapid Thermal Annealing
Realization of p-type gallium nitride by magnesium ion implantation for vertical power devices | Scientific Reports
Si and Mg Ion Implantation for Doping of GaN Grown on Silicon | Semantic Scholar
The Mechanistic Determination of Doping Contrast from Fermi Level Pinned Surfaces in the Scanning Electron Microscope Using Energy-Filtered Imaging and Calculated Potential Distributions | Microscopy and Microanalysis | Cambridge Core
Selective area isolation of β-Ga2O3 using multiple energy nitrogen ion implantation: Applied Physics Letters: Vol 113, No 17
Boron Doping in Next-Generation Materials for Semiconductor Device | IntechOpen
Ion implantation of tunnel junction as a method for defining the aperture of III-nitride-based micro-light-emitting diodes
Boron Doping in Next-Generation Materials for Semiconductor Device | IntechOpen
Micro | Free Full-Text | Ion Implantation Doping in Silicon Carbide and Gallium Nitride Electronic Devices
Low-energy Se ion implantation in MoS2 monolayers | npj 2D Materials and Applications
Ion implantation technology for the selective area doping of SiC microelectronic devices | Bologna UNIT
Dopant activation process in Mg-implanted GaN studied by monoenergetic positron beam | Scientific Reports
Process Optimization for Selective Area Doping of GaN by Ion Implantation | SpringerLink
